4GB, DDR4, 3200MT/s, Non-ECC, CL22, 1.2V, 288-pin, JEDEC
Key Features
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- Single-rank
- On-board I2 serial presence-detect (SPD) EEPROM
- 8 internal banks; 2 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Fly-by topology
- Terminated control command and address bus
- RoHS Compliant and Halogen-Free
Description
ValueRAM's KVR32N22S6/4 is a 512M x 64-bit (4GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers.
Specifications
| Power |
|---|
| Memory voltage |
1.2 V |
| Design |
|---|
| JEDEC standard |
Yes |
| Technical details |
|---|
| Country of origin |
Taiwan |
| Doesn't contain |
Halogen |
| Compliance certificates |
RoHS |
| Memory |
|---|
| Buffered memory type |
Unregistered (unbuffered) |
| Memory layout (modules x size) |
1 x 4 GB |
| Internal memory |
4 GB |
| Component for |
PC/server |
| Memory form factor |
288-pin DIMM |
| CAS latency |
22 |
| Memory voltage |
1.2 V |
| Lead plating |
Gold |
| Module configuration |
512M x 64 |
| Row cycle time |
45.75 ns |
| Refresh row cycle time |
350 ns |
| Row active time |
32 ns |
| Memory ranking |
1 |
| ECC |
No |
| Internal memory type |
DDR4 |
| Programming power voltage (VPP) |
2.5 V |
| Features |
|---|
| Buffered memory type |
Unregistered (unbuffered) |
| Memory layout (modules x size) |
1 x 4 GB |
| Internal memory |
4 GB |
| Component for |
PC/server |
| Memory form factor |
288-pin DIMM |
| CAS latency |
22 |
| Memory voltage |
1.2 V |
| Lead plating |
Gold |
| Module configuration |
512M x 64 |
| Row cycle time |
45.75 ns |
| Refresh row cycle time |
350 ns |
| Row active time |
32 ns |
| Country of origin |
Taiwan |
| Memory ranking |
1 |
| ECC |
No |
| Internal memory type |
DDR4 |
| Programming power voltage (VPP) |
2.5 V |
| JEDEC standard |
Yes |
| Harmonized System (HS) code |
84733020 |
| Memory data transfer rate |
3200 MT/s |
| Operational conditions |
|---|
| Operating temperature (T-T) |
0 - 85 °C |
| Storage temperature (T-T) |
-55 - 100 °C |
| Sustainability |
|---|
| Doesn't contain |
Halogen |
| Weight & dimensions |
|---|
| Width |
5.25" (133.3 mm) |
| Height |
1.23" (31.2 mm) |
| Logistics data |
|---|
| Harmonized System (HS) code |
84733020 |
| Other features |
|---|
| Country of origin |
Taiwan |
| Harmonized System (HS) code |
84733020 |
